???`? qs043-401-m0054 (2/4) ? ?? dimension:mm ????g?R ollector-mitter oltage ` ? g R ate-mitter oltage ollector urrent p ? ollector ower issipation unction emperature ange torage emperature ange ~ F R(erminal to ase ,inute) solation oltage , odule ase to eatsink . ? .. ounting orque usbar to ain erminal ? . ? (kgf?cm) . . . ollector-mitter ut-ff urrent = 1200v, = 0v . ` ? ate-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage =400a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, =400ma . . nput apacitance = 10v, = 0v,=1mh 33,000 N r g ise ime . . `??rg urn-on ime . . r g all ime . . ???rg witching ime `???rg urn-off ime = 600v l = 1.5 g = 1 = 15v . . ? ?`?`??`? orward urrent . . . R eak orward oltage =400a, = 0v . . r g everse ecovery ime =400a, = -10v i/t=400a/s . . ? . . . . hermal mpedance iode th(j-c) junction to case . (c) 1 2 (e) 4 (e) 3 (g) 62 16 14 48 20 25.5 23 13 7 4 - ?6.5 2 -m6 108 93 9 24 20 29 2 -m4 11 2 1 3 4 label
???`? qs043-401-m0054 (3/4) ?? 0 2 4 6 8 10 12 14 16 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 600 700 800 total gate charge qg (nc) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) fig.4- gate charge vs. collector to emitter voltage (typical) v ce =600v 400v 200v r l =1.5 t c =25 0.1 0.2 0.5 1 2 5 10 20 50 100 200 200 500 1000 2000 5000 10000 20000 50000 100000 collector to emitter voltage v ce (v) capacitance c (pf) fig.5- capacitance vs. collector to emitter voltage (typical) cies coes cres v ge =0v f=1mh z t c =25 0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.2- collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25 400a i c =200a 800a 0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3- collector to emitter on voltage vs. gate to emitter voltage (typical) i c =200a 400a 800a t c =125 0246810 0 200 400 600 800 collector to emitter voltage v ce (v) collector current i c (a) fig.1- output characteristics (typical) t c =25 10v 9v 12v 15v v ge =20v 8v 7v 0 100 200 300 400 0 0.2 0.4 0.6 0.8 1 1.2 1.4 collector current i c (a) switching time t (s) fig.6- collector current vs. switching time (typical) t off t f t r t on v cc =600v r g = 1.0 v ge =15v t c =25
???`? qs043-401-m0054 (4/4) ?? 01234 0 100 200 300 400 500 600 700 800 forward voltage v f (v) forward current i f (a) fig.8- forward characteristics of free wheeling diode (typical) t c =25 t c =125 0 400 800 1200 1600 2000 2400 10 20 50 100 200 300 500 1000 -di/dt (a/s) peak reverse recovery current i rrm (a) reverse recovery time trr (ns) fig.9- reverse recovery characteristics (typical) i f =400a t c =25 i rrm trr 0.5 1 2 5 10 20 50 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g () switching time t (s) fig.7- series gate impedance vs. switching time (typical) v cc =600v i c =400a v ge =15v t c =25 tf tr ton toff 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 2x10 -4 5x10 -4 1x10 -3 2x10 -3 5x10 -3 1x10 -2 2x10 -2 5x10 -2 1x10 -1 2x10 -1 5x10 -1 1 time t (s) transient thermal impedance rth (j-c) (/w) fig.11- transient thermal impedance t c =25 1 shot pulse frd igbt 0 400 800 1200 1600 0.1 0.2 0.5 1 2 10 20 50 100 200 500 1000 2000 5000 collector to emitter voltage v ce (v) collector current i c (a) fig.10- reverse bias safe operating area r g =1 v ge =15v t c Q125
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